DocumentCode
2226313
Title
Bulk contribution to resonant second-harmonic generation at Si-SiO/sub 2/ interfaces
Author
Yongqiang An ; Cundiff, S.T.
Author_Institution
Colorado Univ., Boulder, CO, USA
fYear
2002
fDate
19-24 May 2002
Firstpage
148
Lastpage
149
Abstract
Summary form only given. Spectroscopic second-harmonic generation (SHG) studies have shown that a resonance occurs around the E/sub 1/ transition energy of bulk Si at Si-SiO/sub 2/ interfaces. Original studies neglected the bulk SHG contribution and showed the induced static field effects at interface cannot be responsible for the resonance. We found that the bulk contribution is non-negligible and it can shift the resonance energy.
Keywords
electroreflectance; interface phenomena; optical harmonic generation; resonant states; silicon-on-insulator; Si-SiO/sub 2/; Si-SiO/sub 2/ interfaces; bulk SHG contribution; bulk contribution; induced static field effects; resonance energy; second-harmonic generation; spectroscopic SHG; transition energy; Interface phenomena; Optical frequency conversion; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-708-3
Type
conf
DOI
10.1109/QELS.2002.1031233
Filename
1031233
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