Title :
Bulk contribution to resonant second-harmonic generation at Si-SiO/sub 2/ interfaces
Author :
Yongqiang An ; Cundiff, S.T.
Author_Institution :
Colorado Univ., Boulder, CO, USA
Abstract :
Summary form only given. Spectroscopic second-harmonic generation (SHG) studies have shown that a resonance occurs around the E/sub 1/ transition energy of bulk Si at Si-SiO/sub 2/ interfaces. Original studies neglected the bulk SHG contribution and showed the induced static field effects at interface cannot be responsible for the resonance. We found that the bulk contribution is non-negligible and it can shift the resonance energy.
Keywords :
electroreflectance; interface phenomena; optical harmonic generation; resonant states; silicon-on-insulator; Si-SiO/sub 2/; Si-SiO/sub 2/ interfaces; bulk SHG contribution; bulk contribution; induced static field effects; resonance energy; second-harmonic generation; spectroscopic SHG; transition energy; Interface phenomena; Optical frequency conversion; Silicon on insulator technology;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031233
