DocumentCode :
2226368
Title :
60 GHz GaAs MMIC technology for a high data rate mobile broadband demonstrator
Author :
Guttich, U. ; Plattner, A. ; Schwab, W. ; Telliez, I. ; Tranchant, S. ; Savary, P. ; Bourne-Yaonaba, P. ; Byzery, B. ; Delhaye, E. ; Cordier, C. ; Chelouche, M.
Author_Institution :
Daimler-Benz AG, Ulm, Germany
Volume :
2
fYear :
1996
fDate :
17-21 June 1996
Firstpage :
495
Abstract :
A millimeter-wave front end demonstrator for broadband pico-cell networks has been developed using 60 GHz GaAs MMIC technology. The following sub-assemblies are integrated in the demonstrator: a 56.8 GHz phase locked LO, an upconverter from 5.2-6.2 GHz IF to a 62-63 GHz band, a double-channel low noise downconverter from the 62-63 GHz band to an IF of 5.2-6.2 GHz, and a power amplifier for the 62 GHz to 66 GHz band. For a duplex operation a second upconverter module operating at 65-66 GHz (IF 8.2-9.2 GHz) is used. All monolithic HFET and PHFET circuits are realised using subquarter micron technologies. For the fully assembled receivers overall noise figures of less than 10 dB have been measured. Field tests have proven the ability to transmit data nearly error free over a distance of 200 m.
Keywords :
III-V semiconductors; VLSI; broadband networks; digital radio; field effect MIMIC; gallium arsenide; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave oscillators; mobile radio; phase locked oscillators; power amplifiers; radio networks; 200 m; 60 GHz; GaAs; HFET circuits; MMIC technology; PHFET circuits; broadband pico-cell networks; data rate; double-channel low noise downconverter; duplex operation; millimeter-wave front end demonstrator; mobile broadband demonstrator; overall noise figures; phase locked LO; power amplifier; subquarter micron technologies; upconverter; Assembly; Circuits; Gallium arsenide; HEMTs; Low-noise amplifiers; MMICs; MODFETs; Millimeter wave technology; Noise figure; Phase noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-3246-6
Type :
conf
DOI :
10.1109/MWSYM.1996.510981
Filename :
510981
Link To Document :
بازگشت