Research and development of transistor structure in nano-scale region

Author

Koyanagi, M. ; Yamada, Y. ; Park, M. ; Fukushima, T. ; Tanaka, T.

Author_Institution

Dept. of Bioeng. & Robot., Tohoku Univ., Sendai

fYear

2006

fDate

Jan. 30 2006-Feb. 1 2006

Firstpage

34

Lastpage

37

Abstract

In this work, new silicon-on-low-k substrate (SOLK) MOSFET and germanium-on-low-k substrate (GOLK) MISFET are proposed. SOLK-MOSFET with metal back-gate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current, and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. Ge MISFETs were fabricated with HfO₂ gate dielectric and W/W₂N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. Excellent drain current-voltage characteristics and subthreshold characteristics in are obtained in the fabricated GOI-MISFETs.

Keywords

MOSFET; condensation; germanium; hafnium compounds; low-k dielectric thin films; nanoelectronics; silicon; silicon-on-insulator; tungsten; tungsten compounds; wafer bonding; GOI wafer; GOLK-MISFET; SOI-MOSFET; SOLK-MOSFET; Si; W-W₂N-HfO₂-Ge; back-gate bias voltage; drain current-voltage characteristics; gate dielectric; graded germanium condensation method; low-k substrate; metal back-gate; nanoscale transistor structure; off-current; on-current; threshold voltage; wafer bonding method; Dielectric materials; Hafnium oxide; Inorganic materials; MISFETs; MOSFET circuits; Nanostructures; Research and development; Threshold voltage; Voltage control; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano CMOS, 2006 International Workshop on

Conference_Location

Mishima

Print_ISBN

978-1-4244-0603-6

Type

conf

DOI

10.1109/IWNC.2006.4570974

Filename

4570974