Title :
Research and development of transistor structure in nano-scale region
Author :
Koyanagi, M. ; Yamada, Y. ; Park, M. ; Fukushima, T. ; Tanaka, T.
Author_Institution :
Dept. of Bioeng. & Robot., Tohoku Univ., Sendai
fDate :
Jan. 30 2006-Feb. 1 2006
Abstract :
In this work, new silicon-on-low-k substrate (SOLK) MOSFET and germanium-on-low-k substrate (GOLK) MISFET are proposed. SOLK-MOSFET with metal back-gate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current, and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. Ge MISFETs were fabricated with HfO2 gate dielectric and W/W2N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. Excellent drain current-voltage characteristics and subthreshold characteristics in are obtained in the fabricated GOI-MISFETs.
Keywords :
MOSFET; condensation; germanium; hafnium compounds; low-k dielectric thin films; nanoelectronics; silicon; silicon-on-insulator; tungsten; tungsten compounds; wafer bonding; GOI wafer; GOLK-MISFET; SOI-MOSFET; SOLK-MOSFET; Si; W-W2N-HfO2-Ge; back-gate bias voltage; drain current-voltage characteristics; gate dielectric; graded germanium condensation method; low-k substrate; metal back-gate; nanoscale transistor structure; off-current; on-current; threshold voltage; wafer bonding method; Dielectric materials; Hafnium oxide; Inorganic materials; MISFETs; MOSFET circuits; Nanostructures; Research and development; Threshold voltage; Voltage control; Wafer bonding;
Conference_Titel :
Nano CMOS, 2006 International Workshop on
Conference_Location :
Mishima
Print_ISBN :
978-1-4244-0603-6
DOI :
10.1109/IWNC.2006.4570974
