Title :
Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT
Author :
Schefer, M. ; Meier, H.-P. ; Klepser, B.-U. ; Patrick, W. ; Bachtold, W.
Author_Institution :
Lab. for EM Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
A variable gain mm-wave amplifier, based on InP HEMT devices, is demonstrated. The measured gain control range of 14 dB is the largest reported in the mm-wave range for a monolithically integrated variable gain amplifier. The two stage circuit consists of a single gate transistor and a dual-gate transistor. The circuit has a maximum gain of 22 dB at 44 GHz and a bandwidth of 14.6 GHz. The circuit was fabricated in coplanar technology.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguides; field effect MIMIC; indium compounds; millimetre wave amplifiers; 14.6 GHz; 22 dB; 44 GHz; InP; coplanar mm-wave amplifier; dual-gate HEMT; dual-gate transistor; gain control; single gate transistor; two stage circuit; variable gain amplifier; Bandwidth; Circuits; Coplanar waveguides; Frequency; Gain control; HEMTs; Indium phosphide; Microwave amplifiers; Microwave transistors; Radio spectrum management;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.510987
