Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT

Author

Schefer, M. ; Meier, H.-P. ; Klepser, B.-U. ; Patrick, W. ; Bachtold, W.

Author_Institution

Lab. for EM Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

521

Abstract

A variable gain mm-wave amplifier, based on InP HEMT devices, is demonstrated. The measured gain control range of 14 dB is the largest reported in the mm-wave range for a monolithically integrated variable gain amplifier. The two stage circuit consists of a single gate transistor and a dual-gate transistor. The circuit has a maximum gain of 22 dB at 44 GHz and a bandwidth of 14.6 GHz. The circuit was fabricated in coplanar technology.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguides; field effect MIMIC; indium compounds; millimetre wave amplifiers; 14.6 GHz; 22 dB; 44 GHz; InP; coplanar mm-wave amplifier; dual-gate HEMT; dual-gate transistor; gain control; single gate transistor; two stage circuit; variable gain amplifier; Bandwidth; Circuits; Coplanar waveguides; Frequency; Gain control; HEMTs; Indium phosphide; Microwave amplifiers; Microwave transistors; Radio spectrum management;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.510987

Filename

510987