DocumentCode
2226595
Title
Importance of biexcitonic scattering in exciton dephasing in quantum dots
Author
Gotoh, H. ; Kamada, Hiroki ; Saitoh, Takashi ; Ando, Hideki ; Temmyo, J.
Author_Institution
NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
fYear
2002
fDate
19-24 May 2002
Firstpage
156
Abstract
Summary form only given. The mechanism of exciton dephasing was clarified in zero-dimensional(0-D) InGaAs quantum dots by high-energy resolution single dot spectroscopy. We measured the exciton dephasing time from homogenous linewidth of excited levels of an exciton in an isolated quantum dot. Although the exciton acoustic phonon scattering has been believed to be the origin of the dephasing so far, we found that the biexcitonic scattering plays an very important role in the dephasing. This is a distinct feature of the 0-D quantum dot structure which has never been observed in 3-D, 2-D and 1-D structures.
Keywords
III-V semiconductors; biexcitons; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; spectral line breadth; InGaAs; PL signal; biexcitonic scattering; exciton dephasing; exciton recombination; exciton-exciton interaction; high-energy resolution single dot spectra; homogenous linewidth; isolated quantum dot; self-assembled; zero-dimensional quantum dots; Excitons; Gallium compounds; Indium compounds; Photoluminescence; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-708-3
Type
conf
DOI
10.1109/QELS.2002.1031248
Filename
1031248
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