Title :
Hard and soft X-ray excited photoelectron spectroscopy study on high-κ gate insulators
Author :
Nohira, Hiroshi ; Hattori, Takeo
Author_Institution :
Dept. of Electr. & Electron. Eng., Musashi Inst. of Technol., Tokyo
fDate :
Jan. 30 2006-Feb. 1 2006
Abstract :
Hard and soft X-ray photoelectron spectroscopy study on the composition and the chemical structures of transition layers at La2O3/Si(100), Gd2O3/Si(100), Lu2O3/Si(100) and La2O3/Y2O3/Si(100) interfaces and their thermal stabilities are discussed. Soft X-ray photoelectron spectroscopy study on the distribution of nitrogen atomos in nearly 1-nm-thick oxynitride films and the chemical structures of the transition layer at SiO2/Si(100) interface are also discussed.
Keywords :
X-ray photoelectron spectra; chemical structure; elemental semiconductors; gadolinium compounds; interface structure; lanthanum compounds; lutetium compounds; silicon; thermal stability; yttrium compounds; Gd2O3-Si; La2O3-Si; La2O3-Y2O3-Si; Lu2O3-Si; chemical structures; high-kappa gate insulators; soft X-ray excited photoelectron spectroscopy; thermal stabilities; transition layers; Annealing; Atomic layer deposition; Bonding; Chemical technology; Dielectric devices; Dielectric substrates; Insulation; Nanoscale devices; Spectroscopy; Thermal stability; Gate Insulator; High-κ dielectric; La2O3; Photoelectron Spectroscopy;
Conference_Titel :
Nano CMOS, 2006 International Workshop on
Conference_Location :
Mishima
Print_ISBN :
978-1-4244-0603-6
DOI :
10.1109/IWNC.2006.4570979
