High-resolution Rutherford backscattering spectroscopy for Nano-CMOS applications

Author

Kimura, Kenji ; Ming, Zhao ; Nakajima, Kaoru ; Suzuki, Motofumi

Author_Institution

Dept. of Micro Eng., Kyoto Univ., Kyoto

fYear

2006

fDate

Jan. 30 2006-Feb. 1 2006

Firstpage

89

Lastpage

109

Abstract

A compact high-resolution RBS (HKBS) system, consisting of a simple magnetic spectrometer and a small accelerator, is used for Nano-CMOS applications. The HKBS system has several attractive features, e.g. capability of depth profiling with monolayer depth resolution, small footprint, reasonably short measuring time. Several examples of the applications are presented, which include observation of high-k/Si interface using grazing-angl-esputtering-assisted HKBS, hydrogen depth profiling in gate dielectric films, and observation of Si emission from the SiO₂/Si interface during oxidation of HfO₂/SiO₂/Si(001). These examples show that HKBS is a powerful tool for Nano-CMOS applications.

Keywords

CMOS integrated circuits; Rutherford backscattering; elemental semiconductors; hafnium compounds; oxidation; silicon; silicon compounds; spectroscopy; HfO₂-SiO₂-Si; gate dielectric films; grazing-angl-esputtering-assisted HKBS; high-resolution Rutherford backscattering spectroscopy; hydrogen depth profiling; magnetic spectrometer; monolayer depth resolution; nano-CMOS applications; small accelerator; small footprint; Accelerator magnets; Backscatter; Dielectric films; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Hydrogen; Oxidation; Spectroscopy; Time measurement; Grazing angle sputtering; HfO2; High resolution RBS; Hydrogen; Interfacial layer; La2O3; Nano CMOS; Si emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano CMOS, 2006 International Workshop on

Conference_Location

Mishima

Print_ISBN

978-1-4244-0603-6

Type

conf

DOI

10.1109/IWNC.2006.4570980

Filename

4570980