DocumentCode
2226656
Title
AlGaAs/InGaAs power P-HEMTs for high-efficiency, low-voltage portable applications
Author
Martinez, M.J. ; Schirmann, E. ; Durlam, M. ; Huang, J.-H. ; Tehrani, S. ; Cody, N. ; Driver, T. ; Barkley, K.
Author_Institution
Motorola Semicond. Products Sector, Commun. Products Lab., Tempe, AZ, USA
Volume
2
fYear
1996
fDate
17-21 June 1996
Firstpage
551
Abstract
Power Pseudomorphic High Electron Mobility Transistors (P-HEMTs) with unprecedented efficiency are being produced for low-voltage portable wireless products. 12 mm devices operating at 3.5 V achieve more than 75% power added efficiency, 1.5 W output power, and 11.5 dB gain, simultaneously, at a frequency of 850 MHz.
Keywords
III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium arsenide; indium compounds; mobile radio; power HEMT; power field effect transistors; 1.5 W; 11.5 dB; 3.5 V; 75 percent; 850 MHz; AlGaAs-InGaAs; UHF; high electron mobility transistors; high-efficiency type; low-voltage portable applications; portable wireless products; power PHEMTs; pseudomorphic HEMT; Buffer layers; Contacts; Gallium arsenide; Indium gallium arsenide; Laboratories; Packaging; Photonic band gap; Semiconductor device doping; Substrates; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.510994
Filename
510994
Link To Document