Title :
Non-Lorentzian homogeneous lineshape in semiconductor quantum dots
Author :
Langbein, W. ; Borri, P. ; Schneider, S. ; Patton, B. ; Woggon, U. ; Sellin, R.L. ; Ouyang, D. ; Bimberg, D. ; Leonardi, K. ; Hommel, D.
Author_Institution :
Dortmund Univ., Germany
Abstract :
Summary form only given. One basic information in light-matter interaction is the homogeneous line broadening of an optical transition, inversely proportional to its dephasing time. In this work we study the homogeneous broadening in InGaAs/GaAs and in CdSe/ZnSe quantum dots by measuring both decoherence times and lineshapes. We use time-resolved four-wave mixing on an inhomogeneously broadened dot ensemble, and single-dot photoluminescence spectroscopy.
Keywords :
II-VI semiconductors; III-V semiconductors; biexcitons; cadmium compounds; gallium arsenide; indium compounds; multiwave mixing; phonon-exciton interactions; photoluminescence; semiconductor quantum dots; spectral line broadening; time resolved spectra; zinc compounds; CdSe-ZnSe; InGaAs-GaAs; biexciton transitions; charged exciton; decoherence processes; decoherence times; dephasing time; elastic acoustic-phonon interaction; homogeneous line broadening; lifetime-limited zero-phonon line; nonLorentzian homogeneous lineshape; optical transition; self-organized dots; semiconductor quantum dots; single-dot photoluminescence; time-resolved four-wave mixing; Cadmium compounds; Excitons; Gallium compounds; Indium compounds; Optical mixing; Phonons; Photoluminescence; Quantum dots; Zinc compounds;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031252
