RF silicon MOS integrated power amplifier for analog cellular applications

Author

Ngo, D. ; Dragon, C. ; Costa, J. ; Lamey, D. ; Spears, E. ; Burger, W. ; Camilleri, N.

Author_Institution

Commun. Products Lab., Motorola Inc., Tempe, AZ, USA

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

559

Abstract

We report the RF performance of the first integrated power amplifier using silicon MOS field effect transistors, shunt and series capacitors, transmission lines, spiral inductors, ground vias and ESD protection devices. The amplifier provided an output power of 1.5 W and 56% efficiency at a supply voltage of 5.8 V (850 MHz) with 25 dB of small signal gain and more than 10 dB input return loss.

Keywords

MMIC power amplifiers; MOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cellular radio; electrostatic discharge; elemental semiconductors; power amplifiers; protection; silicon; 1.5 W; 10 dB; 5.8 V; 56 percent; 850 MHz; ESD protection devices; MOSFET amplifier; RF performance; Si; Si MOS integrated power amplifier; analog cellular applications; spiral inductors; FETs; Inductors; MOS capacitors; Power amplifiers; Power transmission lines; Radio frequency; Radiofrequency amplifiers; Shunt (electrical); Silicon; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.510996

Filename

510996