• DocumentCode
    2226696
  • Title

    Hf-based high-k gate dielectrics - Scalability for hp45 node and beyond -

  • Author

    Nara, Yasuo ; Inumiya, Seiji ; Kamiyama, Satoshi ; Nakamura, Kunio

  • Author_Institution
    Res. Dept. 1, Semicond. Leading Edge Technol., Inc., Tsukuba
  • fYear
    2006
  • fDate
    Jan. 30 2006-Feb. 1 2006
  • Firstpage
    132
  • Lastpage
    135
  • Abstract
    This proceeding we will discuss the scalability of Hf-based high-k gate dielectrics for hp45 node and beyond both with high-temperature gate-first integration and low-temperature gate-last integration. It describes the process optimization and metal gate MOSFET characteristics using gate-first integration with HfSiON and gate-last integration with HfO2.
  • Keywords
    MOSFET; hafnium compounds; high-k dielectric thin films; HfO2; HfSiON; high-k gate dielectric scalability; high-temperature gate-first integration; hp45 node; low-temperature gate-last integration; metal gate MOSFET; process optimization; Fabrication; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Nitrogen; Optical films; Plasma measurements; Presence network agents; Scalability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano CMOS, 2006 International Workshop on
  • Conference_Location
    Mishima
  • Print_ISBN
    978-1-4244-0603-6
  • Type

    conf

  • DOI
    10.1109/IWNC.2006.4570984
  • Filename
    4570984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2226696