Title :
High efficiency L-band variable output power amplifiers for use in communication systems
Author :
Bouthillette, S. ; Platzker, A.
Author_Institution :
Raytheon Adv. Device Center, Andover, MA, USA
Abstract :
A pair of high efficiency low distortion L-band power amplifiers operating over variable drain voltages with a fixed gate voltage were developed. High efficiency and low distortion are maintained for drain voltages over the range of 2-8 V, while providing 12 dB of output power variation. The two amplifiers are single stage reactively matched hybrids that utilize discrete 0.5 /spl mu/m PHEMT devices consisting of 4.8 mm and 17.6 mm peripheries. These amplifiers are ideally suited for L-band transmitters in communication systems.
Keywords :
HEMT circuits; UHF integrated circuits; UHF power amplifiers; electric distortion; hybrid integrated circuits; microwave links; power amplifiers; radio transmitters; 0.5 micron; 2 to 8 V; L-band power amplifiers; L-band transmitters; UHF; communication systems application; discrete PHEMT devices; fixed gate voltage; high efficiency type; low distortion; reactively matched hybrids; single stage configuration; variable drain voltages; variable output power amplifiers; Distortion measurement; High power amplifiers; L-band; Noise measurement; PHEMTs; Performance evaluation; Power amplifiers; Power generation; Transmitters; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.510997
