High efficiency L-band variable output power amplifiers for use in communication systems

Author

Bouthillette, S. ; Platzker, A.

Author_Institution

Raytheon Adv. Device Center, Andover, MA, USA

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

563

Abstract

A pair of high efficiency low distortion L-band power amplifiers operating over variable drain voltages with a fixed gate voltage were developed. High efficiency and low distortion are maintained for drain voltages over the range of 2-8 V, while providing 12 dB of output power variation. The two amplifiers are single stage reactively matched hybrids that utilize discrete 0.5 /spl mu/m PHEMT devices consisting of 4.8 mm and 17.6 mm peripheries. These amplifiers are ideally suited for L-band transmitters in communication systems.

Keywords

HEMT circuits; UHF integrated circuits; UHF power amplifiers; electric distortion; hybrid integrated circuits; microwave links; power amplifiers; radio transmitters; 0.5 micron; 2 to 8 V; L-band power amplifiers; L-band transmitters; UHF; communication systems application; discrete PHEMT devices; fixed gate voltage; high efficiency type; low distortion; reactively matched hybrids; single stage configuration; variable drain voltages; variable output power amplifiers; Distortion measurement; High power amplifiers; L-band; Noise measurement; PHEMTs; Performance evaluation; Power amplifiers; Power generation; Transmitters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.510997

Filename

510997