DocumentCode
2226736
Title
CMOS technology-based spiral inductors for RF applications
Author
Chen, Ji ; Liou, Juin J.
Author_Institution
Electr. & Comput. Eng. Dept., Univ. of Central Florida, Orlando, FL
fYear
2006
fDate
Jan. 30 2006-Feb. 1 2006
Firstpage
146
Lastpage
147
Abstract
In this paper, a physics-based model applicable for CMOS technology-based inductors will be developed. Our model development will cover both the symmetrical and asymmetrical inductors. In addition, an octagonal spiral pattern will be considered, but the approach applies generally to other non-circular patterns.
Keywords
CMOS integrated circuits; inductors; CMOS technology; asymmetrical inductor; octagonal spiral pattern; radiofrequency application; spiral inductor; CMOS technology; Equivalent circuits; Inductors; Integrated circuit modeling; Q factor; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Solid state circuit design; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano CMOS, 2006 International Workshop on
Conference_Location
Mishima
Print_ISBN
978-1-4244-0603-6
Type
conf
DOI
10.1109/IWNC.2006.4570986
Filename
4570986
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