Title :
Defect energy levels in HfO2
Author :
Robertson, John ; Xiong, Ka
Author_Institution :
Eng. Dept., Cambridge Univ., Cambridge
fDate :
Jan. 30 2006-Feb. 1 2006
Abstract :
The energy levels of the oxygen vacancy and oxygen interstitial defects in HfO2 are calculated using density functional methods that do not need an empirical bandgap correction. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level nearer the HfO2 conduction band and just above the Si gap, depending on its charge state. It is identified as the main electron trap in HfO2. The oxygen interstitial gives levels just above the oxide valence band.
Keywords :
conduction bands; defect states; density functional theory; electron traps; elemental semiconductors; energy gap; hafnium compounds; interstitials; silicon; vacancies (crystal); valence bands; HfO2:Si; charge state; conduction band; defect energy levels; density functional methods; electron trap; empirical bandgap correction; oxygen interstitial; oxygen vacancy; valence band; Dielectrics and electrical insulation; Electron traps; Energy states; Hafnium oxide; High-K gate dielectrics; Leakage current; Linear discriminant analysis; Paramagnetic resonance; Photonic band gap; Power engineering and energy; IWNC; Nano CMOS;
Conference_Titel :
Nano CMOS, 2006 International Workshop on
Conference_Location :
Mishima
Print_ISBN :
978-1-4244-0603-6
DOI :
10.1109/IWNC.2006.4570991
