Title :
Local-property analysis for modeling of gate insulator materials
Author :
Doi, Kentaro ; Nakamura, Koichi ; Tachibana, Akitomo
Author_Institution :
Dept. of Micro Eng., Kyoto Univ., Kyoto
fDate :
Jan. 30 2006-Feb. 1 2006
Abstract :
We have constructed fundamental theories for electronic properties and dielectric breakdown of gate insulator materials in nano-CMOS devices based on the Rigged QED theory and the regional density functional theory. Simulations about dielectric properties and reliability due to these theories have been carried out for SiO2, ZrO2, HfO2, ZrxSi1-xO2, HfxSi1-xO2, GdxOy, LaxOy, and SiOxNy through the modeling of nano-CMOS system such as crystal and amorphous thin films. Furthermore, we have reported development of the nucleus-electron multiple dynamics program codes following the Rigged QED theory.
Keywords :
CMOS integrated circuits; electric breakdown; gadolinium compounds; hafnium compounds; insulating materials; integrated circuit modelling; integrated circuit reliability; lanthanum compounds; nanoelectronics; silicon compounds; zirconium compounds; GdxOy; HfxSi1-xOz; HfO2; LaxOy; Rigged QED theory; SiO2; SiOxNy; ZrxSi1-xOz; ZrO2; amorphous thin Elms; crystal thin Elms; dielectric breakdown; functional theory; gate insulator materials; local-property analysis; nanoCMOS devices; nucleus-electron multiple dynamics program codes; Amorphous materials; Density functional theory; Dielectric breakdown; Dielectric materials; Dielectrics and electrical insulation; Hafnium oxide; Nanoscale devices; Nanostructured materials; Reliability theory; Zirconium; Dielectric property; IWNC; La oxide; Nano CMOS; Regional density functional theory; Reliability; Rigged QED theory;
Conference_Titel :
Nano CMOS, 2006 International Workshop on
Conference_Location :
Mishima
Print_ISBN :
978-1-4244-0603-6
DOI :
10.1109/IWNC.2006.4570993
