Title :
Novel aspects of nanoscale transistors
Author :
Natori, Kenji ; Kurusu, Takashi
Author_Institution :
Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba
fDate :
Jan. 30 2006-Feb. 1 2006
Abstract :
New aspect of device characteristics emerging in nanostructured transistors are reviewed. Three topics are introduced and discussed. First, a new type of parasitic capacitance related to the charge layer thickness in capacitor electrode is discussed. Next, the quasi-ballistic operation of MOSFETs is analyzed in three aspects- one is the reflection-transmission formalism of MOS transport, another is an analysis of the device by Monte Carlo simulation, and the other discusses influence of device structure on its transport. In the last, we compare performance of a carbon nanotube FET to that of a silicon MOSFET.
Keywords :
MOSFET; Monte Carlo methods; nanoelectronics; semiconductor device models; MOSFET; Monte Carlo simulation; nanostructured transistor; parasitic capacitance; quasiballistic operation; reflection-transmission formalism; CNTFETs; Conductors; Electrodes; Electrons; Insulation; MOS capacitors; MOSFETs; Nanoscale devices; Parasitic capacitance; Physics; Capacitance; Carbon nanotube; FET; MOSFETs; Nanoelectronics;
Conference_Titel :
Nano CMOS, 2006 International Workshop on
Conference_Location :
Mishima
Print_ISBN :
978-1-4244-0603-6
DOI :
10.1109/IWNC.2006.4570997
