DocumentCode :
2227098
Title :
Exciton Rabi splitting in semiconductor quantum wells
Author :
Phillips, M. ; Wang, H.
Author_Institution :
Dept. of Phys., Oregon Univ., Eugene, OR, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
171
Abstract :
Summary form only given. We report studies of exciton Rabi splitting where spectrally narrow pump and probe pulses were used. In this case, coherent spectral oscillations in pump-probe spectra can be avoided by tuning the central frequency of the probe pulse. The intensity dependence of the Rabi splitting obtained from these studies reveals a distinctly nonlinear relationship between the Rabi frequency and the applied electric field, in contrast to the linear dependence expected from mean-field based theoretical models. Pump-probe experiments were performed on a 130 /spl Aring/ GaAs/AlGaAs multiple QW sample at 10 K.
Keywords :
III-V semiconductors; aluminium compounds; electroabsorption; excitons; gallium arsenide; infrared spectra; semiconductor quantum wells; 10 K; 130 A; GaAs-AlGaAs; GaAs/AlGaAs multiple QW; absorption spectra; applied electric field; exciton Rabi splitting; exciton-exciton interactions; intensity dependence; nonlinear relationship; probe pulse central frequency tuning; pump-probe spectra; spectrally narrow pump probe pulses; Aluminum compounds; Electroabsorption; Excitons; Gallium compounds; Infrared spectroscopy; Quantum wells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
Type :
conf
DOI :
10.1109/QELS.2002.1031268
Filename :
1031268
Link To Document :
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