Interplay of Rabi oscillation and quantum interference in semiconductor quantum dots

Author

Htoon, H. ; Kulik, D. ; Shih, C. ; Baklenov, O. ; Holmes, A.L. ; Takagahara, T.

Author_Institution

Dept. of Phys., Texas Univ., Austin, TX, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

173

Lastpage

174

Abstract

Summary form only given. We present direct experimental evidence of Rabi oscillation (RO) in individual self-assembled quantum dots (SAQDs) and experimental observation of a new quantum interference (QI) phenomenon. Our detailed theoretical investigations attribute this phenomenon to the coherent dynamics resulting from the interplay between RO and QI. We conduct experiments on an In/sub 0.5/Ga/sub 0.5/As SAQD, which can be considered as a three level system To study the interplay of RO and QI, we perform single dot wavepacket interferometry measurements in the strong excitation regime.

Keywords

III-V semiconductors; excitons; gallium arsenide; indium compounds; light interferometry; photoluminescence; quantum interference phenomena; semiconductor quantum dots; In/sub 0.5/Ga/sub 0.5/As; In/sub 0.5/Ga/sub 0.5/As self-assembled quantum dots; PL intensity; Rabi oscillation; exciton ground state; quantum interference; resonant excitation; single dot wavepacket interferometry; strong excitation regime; three level stem; time domain coherent dynamics; Excitons; Gallium compounds; Indium compounds; Optical interferometry; Photoluminescence; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031271

Filename

1031271