Title :
A novel resonant-type GaAs SPDT switch IC with low distortion characteristics for 1.9 GHz personal handy-phone system
Author :
Kawakyu, K. ; Ikeda, Y. ; Nagaoka, M. ; Ishida, K. ; Kameyama, A. ; Nitta, T. ; Yoshimura, M. ; Kitaura, Y. ; Uchitomi, N.
Author_Institution :
ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
A GaAs SPDT switch IC operating at a low power supply voltage of 2.7 V has been developed for use in Personal Handy-Phone System in the 1.9 GHz band. In combination with MESFETs with low on-resistance and high breakdown voltage, the resonant-type switch IC utilizes stacked FETs and an additional shunt capacitor at the receiver side in order to realize low insertion loss, high isolation and low distortion characteristics. An insertion loss of 0.55 dB and an isolation of 35.8 dB were obtained at 1.9 GHz. The IC also achieved a second order distortion of -54.3 dBc and an adjacent channel leakage power of -66 dBc at 600 kHz apart from 1.9 GHz at 19 dBm output power.
Keywords :
III-V semiconductors; UHF integrated circuits; adjacent channel interference; cordless telephone systems; electric distortion; gallium arsenide; personal communication networks; switching circuits; 0.55 dB; 1.9 GHz; 2.7 V; GaAs; adjacent channel leakage power; breakdown voltage; distortion characteristics; insertion loss; isolation; personal handy-phone system; receiver side; resonant-type SPDT switch IC; second order distortion; shunt capacitor; stacked FETs; Capacitors; FETs; Gallium arsenide; Insertion loss; Low voltage; MESFET integrated circuits; Power generation; Power supplies; Resonance; Switches;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511016
