Staircase-like dynamics of stimulated emission in InAs quantum dot amplifiers

Author

Tartakovskii, A.I. ; Groom, K.M. ; Lemaitre, A. ; Adawi, A.M. ; Fox, A.M. ; Mowbray, D.J. ; Skolnick, M.S. ; Steer, M.

Author_Institution

Dept. of Phys. & Astron., Univ. of Sheffield, UK

fYear

2002

fDate

19-24 May 2002

Firstpage

178

Lastpage

179

Abstract

Summary form only given. We study the dynamics of excited and ground state edge emission in InAs QD amplifiers. Using cw detection and varying the delay between the two excitation pulses we were able to measure the fastest radiative decay reported so far for the carriers in QD excited states. We were also able to study the spectral gain dynamics and the time-resolved saturation of the ground state, occurring due to extremely fast carrier relaxation from the GaAs barriers.

Keywords

III-V semiconductors; carrier relaxation time; indium compounds; quantum dot lasers; semiconductor quantum dots; stimulated emission; time resolved spectra; waveguide lasers; InAs; degenerate pump-probe technique; excited state edge emission; fast carrier relaxation; ground state edge emission; quantum-dot lasers; radiative decay; ridge structure emission; spectral gain dynamics; staircase-like dynamics; stimulated emission; time-resolved saturation; Charge carrier processes; Indium compounds; Quantum dots; Relaxation processes; Stimulated emission; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031278

Filename

1031278