Ultrafast carrier activation in resonantly excited 1.3 /spl mu/m InAs/GaAs quantum dots at room temperature

Summary form only given. Due to the three-dimensional confinement of electronic states in semiconductor quantum dots (QDs), LO phonon scattering is expected to be influenced strongly by the shape of the dots, the energy separation between the QD electronic states, and by the nature and symmetry of the phonon modes. In this paper we demonstrate extremely large electron-hole carrier activation rates from the ground state to the first excited state of high-symmetry InAs QDs resonantly excited at room temperature.