Time-resolved measurement of temperature dependent carrier dynamics in self-organized InGaAs quantum dots

Summary form only given. Directed improvements in the performance of quantum dot optoelectronic devices at room temperature require a full understanding of the temperature dependent carrier dynamics. Recent measurements indicate that thermal reemission and nonradiative recombination may play a role in the dynamics at high temperatures. The carrier reemission is strong above 100 K because carriers couple to a large density of states in the wetting layer (WL). We show direct evidence of this thermalization process in In/sub 0.4/Ga/sub 0.6/As quantum dots through time-resolved differential transmission (DT) measurements of the dot, WL, and barrier populations. We perform an ensemble Monte Carlo analysis of the carrier dynamics to understand our observations.