Title :
Investigation of temperature dependence of contact resistance for Au-Ti-Pd2Si-n+-Si OHMIC contacts subjected to microwave irradiation
Author :
Belyaev, A.E. ; Boltovets, N.S. ; Konakova, R.V. ; Kudryk, Y.Y. ; Sachenko, A.V. ; Sheremet, V.N. ; Vinogradov, A.O.
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., NAS of Ukraine, Kiev, Ukraine
Abstract :
Based on a theoretical analysis of temperature dependence of contact resistance RC for Au-Ti-Pd2Si-n+-Si oh-mic contact, a current flow mechanism is proposed that explains the experimentally observed RC growth with temperature in the 100-380 K temperature range. It is shown that microwave treatment of such contacts leads to reduction of RC values spread over the wafer and decrease of RC, while RC growth with temperature in the 100-380 K temperature range retains.
Keywords :
contact resistance; elemental semiconductors; gold; ohmic contacts; palladium compounds; silicon; titanium; Au-Ti-Pd2Si-Si; contact resistance; current flow mechanism; microwave irradiation; microwave treatment; ohmic contacts; temperature 100 K to 380 K; temperature dependence; Contact resistance; Masers; Ohmic contacts; Silicon; Temperature dependence;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
