Title :
An X-band monolithic active mixer in SiGe HBT technology
Author :
Case, M. ; Maas, S.A. ; Larson, L. ; Rensch, D. ; Harame, D. ; Meyerson, B.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
We present the design, novel fabrication techniques, and measurements of a SiGe HBT X-Band active mixer MMIC. By implementing microstrip transmission lines on an inexpensive, low-loss spin-on dielectric above the lossy Si substrate, we use the high-speed SiGe HBTs in "classical" monolithic microwave circuits.
Keywords :
Ge-Si alloys; MMIC mixers; bipolar MMIC; heterojunction bipolar transistors; semiconductor materials; Si; SiGe; X-band monolithic active mixer; high-speed SiGe HBT technology; lossy Si substrate; low-loss spin-on dielectric; microstrip transmission line; monolithic microwave circuit; Dielectric losses; Dielectric measurements; Dielectric substrates; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Microstrip; Silicon germanium; Transmission line measurements;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511025
