Title :
Bottom-up photonic crystal cavities formed by III-V nanopillar arrays
Author :
Scofield, A.C. ; Shapiro, J.N. ; Lin, A. ; Williams, A.D. ; Wong, P.S. ; Liang, B.L. ; Huffaker, D.L.
Author_Institution :
Dept. of Electr. Eng., Univ. of California at Los Angeles, Los Angeles, CA, USA
Abstract :
We present the optical properties of bottom-up photonic crystal cavities formed by selective-area epitaxy of III-V nanopillars. Photoluminescence spectra demonstrates influence of the photonic band-gap on the emission. Resonant cavity modes are observed.
Keywords :
III-V semiconductors; epitaxial growth; gallium arsenide; indium compounds; nanostructured materials; optical properties; photoluminescence; photonic crystals; III-V nanopillar arrays; InGaAs; bottom up photonic crystal cavities; optical properties; photoluminescence spectra; photonic bandgap; resonant cavity mode; selective area epitaxy; Cavity resonators; Indium gallium arsenide; Optical device fabrication; Optical refraction; Photonic crystals; Stimulated emission; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
