Title :
Detectors with Schottky barrier on the basis of A2B6 semiconductors
Author :
Beletskiy, N.I. ; Mustetsov, N.P. ; Pavlenko, D.V. ; Polyanskiy, N.E.
Author_Institution :
V.N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine
Abstract :
The issues of manufacturing technology of Schottky diodes based on promising compounds A2B6 and their current-voltage characteristics for metallic contacts of Ni, Pt, Pd are discussed. The current-voltage characteristics of experimental samples of photodiodes based on ZnSe under the influence of optical radiation are shown. It was found that the sensitivity of the diodes with platinum contacts is 2-3 times higher than the diodes with contacts made of nickel and palladium under UV irradiation. The analysis of collection efficiency of nonequilibrium carriers in the compounds of ZnSe, ZnTe, CdSe, CdTe is presented.
Keywords :
Schottky barriers; Schottky diodes; nickel; palladium; photodiodes; platinum; Schottky barrier; Schottky diodes; UV irradiation; current-voltage characteristics; diode sensitivity; manufacturing technology; metallic contacts; nonequilibrium carriers; optical radiation; palladium; photodiodes; platinum contacts; Compounds; Current-voltage characteristics; Detectors; Nickel; Photodiodes; Schottky diodes;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
