Detectors with Schottky barrier on the basis of A2B6 semiconductors

Author

Beletskiy, N.I. ; Mustetsov, N.P. ; Pavlenko, D.V. ; Polyanskiy, N.E.

Author_Institution

V.N. Karazin Kharkov Nat. Univ., Kharkov, Ukraine

fYear

2011

fDate

12-16 Sept. 2011

Firstpage

689

Lastpage

690

Abstract

The issues of manufacturing technology of Schottky diodes based on promising compounds A₂B₆ and their current-voltage characteristics for metallic contacts of Ni, Pt, Pd are discussed. The current-voltage characteristics of experimental samples of photodiodes based on ZnSe under the influence of optical radiation are shown. It was found that the sensitivity of the diodes with platinum contacts is 2-3 times higher than the diodes with contacts made of nickel and palladium under UV irradiation. The analysis of collection efficiency of nonequilibrium carriers in the compounds of ZnSe, ZnTe, CdSe, CdTe is presented.

Keywords

Schottky barriers; Schottky diodes; nickel; palladium; photodiodes; platinum; Schottky barrier; Schottky diodes; UV irradiation; current-voltage characteristics; diode sensitivity; manufacturing technology; metallic contacts; nonequilibrium carriers; optical radiation; palladium; photodiodes; platinum contacts; Compounds; Current-voltage characteristics; Detectors; Nickel; Photodiodes; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4577-0883-1

Type

conf

Filename

6069109