Title :
Silicon carbide MESFET´s with 2 W/mm and 50% P.A.E. at 1.8 GHz
Author :
Allen, S.T. ; Palmour, J.W. ; Carter, C.H., Jr ; Weitzel, C.E. ; Moore, K.E. ; Nordquist, K.J. ; Pond, L.L., III
Author_Institution :
Cree Res. Inc., Durham, NC, USA
Abstract :
Silicon carbide MESFET´s with 0.7 /spl mu/m/spl times/332 /spl mu/m gates under class B bias at 1.8 GHz had P/sub 1dB/=28.3 dBm (2 W/mm CW) and 50.4% PAE. At the same power density, these FET´s had 66% PAE at 0.85 GHz. This high power density combined with the extremely high thermal conductivity of SiC makes it a promising technology for high power microwave applications.
Keywords :
UHF field effect transistors; microwave field effect transistors; microwave power transistors; power MESFET; power field effect transistors; silicon compounds; wide band gap semiconductors; 0.85 to 1.8 GHz; 50 to 66 percent; MESFET; SiC; class B bias; high power density; high power microwave applications; high thermal conductivity; Electrons; Frequency; Gallium arsenide; MESFETs; Microwave devices; Microwave technology; Photonic band gap; Silicon carbide; Substrates; Thermal conductivity;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511031
