Title :
Application of AFM methods to control technological operations in the process of manufacturing phosphide-based hetero-bipolar transistors
Author :
Torkhov, N.A. ; Bozhkov, V.G. ; Novikov, V.A. ; Ivonin, I.V. ; Marmalyuk, Aleksandr A. ; Ryaboshtan, Y.L.
Author_Institution :
Sci. - Res. Inst. of Semicond., Tomsk, Russia
Abstract :
It was shown that modern AFM methods of controlling geometry and physical parameters of semiconductor InP/InGaAs/InP heterostructures can be successfully applied in manufacturing of modern UHF DHBT-transistors with narrow base (<; 100 nm). Operational control of geometric and physical parameters of heterostucture in intervals between carrying out technological operations allows controlling more effectively their manufacture and production.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device manufacture; AFM methods; InP-InGaAs-InP; UHF DHBT-transistors; geometry control; phosphide-based heterobipolar transistors; physical parameter control; semiconductor heterostructures; technological operation control; Electronic mail; Heterojunctions; Indium gallium arsenide; Indium phosphide; Manufacturing; Microscopy; Three dimensional displays;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
