• DocumentCode
    2227660
  • Title

    Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers

  • Author

    Smowton, P.M. ; Elliott, S.N. ; Shutts, S. ; Michell, G. ; Al-Ghamdi, M.S. ; Krysa, A.B.

  • Author_Institution
    Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We quantitatively determine the factors that decide the threshold current temperature dependence at high temperatures in state-of-the-art InP quantum dot lasers and demonstrate a design with low threshold and reduced temperature sensitivity.
  • Keywords
    III-V semiconductors; indium compounds; optoelectronic devices; quantum dot lasers; InP-AlGaInP; high temperatures; low threshold; quantum dot lasers; reduced temperature sensitivity; temperature dependence; threshold current; Current density; Quantum dot lasers; Temperature dependence; Temperature distribution; Temperature measurement; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950132
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2227660