A compact physically-based bipolar transistor model

Author

Michaels, Kimon W. ; Strojwas, Andrzej J.

Author_Institution

Center for Comput. Aided Design, Carnegie-Mellon Univ., Pittsburgh, PA, USA

fYear

1989

fDate

18-19 Sep 1989

Firstpage

242

Lastpage

245

Abstract

A comprehensive bipolar transistor model for circuit simulation is discussed. The model is physically based and includes new models for the base region, base-collector depletion region, and epitaxial collector region that account for high-current effects. The model has been implemented in the circuit simulator SLICE and shown to model high current densities accurately. The increase in simulation time compared to the Gummel-Poon model is minimized by not requiring iterations within the model code

Keywords

bipolar transistors; circuit analysis computing; semiconductor device models; Gummel-Poon model; base collector depletion region model; base region model; circuit simulation; circuit simulator SLICE; compact physically-based bipolar transistor model; epitaxial collector region model; high current densities modelling; high-current effects; simulation time; Bipolar integrated circuits; Bipolar transistors; Circuit simulation; Computational modeling; Conductivity; Current density; Design automation; Integral equations; Numerical models; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69500

Filename

69500