DocumentCode :
2227687
Title :
Band filling in p-doped InAs quantum dot lasers
Author :
Hutchings, M. ; O´Driscoll, I. ; Smowton, P.M. ; Blood, P.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
Measurements of modal gain spectra show differences in band filling for un-doped and p-doped quantum dot samples which we show is associated with a transition to a non-thermal regime as the temperature is reduced.
Keywords :
III-V semiconductors; indium compounds; quantum dot lasers; semiconductor device measurement; InAs; band filling; modal gain spectra; p-doped quantum dot lasers; Absorption; Blood; Filling; Gallium arsenide; Quantum dot lasers; Temperature distribution; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950133
Link To Document :
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