• DocumentCode
    2227706
  • Title

    Self-aligned T-gate pHEMT

  • Author

    Fedosova, M.A. ; Gavrilova, A.M. ; Erofeev, Evgeny V. ; Arykov, Vadim S.

  • Author_Institution
    Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    695
  • Lastpage
    696
  • Abstract
    Self-aligned 0.25 μm T-gate pHEMT technology is described in this paper. Basic requirements of self-aligned technology for gate profile are presented. Metallization system and annealing parameters providing low-resistance ohmic contacts are chosen. Current-voltage characteristics and current gain of routine and self-aligned pHEMT are compared. The self-aligned technology provides an increase in transconductance S and drive current Ids of 10...15% comparing with routine process. Cutoff frequency increased by 15 GHz and reached Ft~70 GHz.
  • Keywords
    annealing; high electron mobility transistors; ohmic contacts; semiconductor device metallisation; annealing parameters; current gain; current-voltage characteristics; drive current; gate profile; low-resistance ohmic contacts; metallization system; routine pHEMT; self-aligned T-gate pHEMT technology; size 0.25 mum; transconductance; Annealing; Gallium arsenide; Gold; Logic gates; Nickel; PHEMTs; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6069112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2227706