Title :
Self-aligned T-gate pHEMT
Author :
Fedosova, M.A. ; Gavrilova, A.M. ; Erofeev, Evgeny V. ; Arykov, Vadim S.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
Abstract :
Self-aligned 0.25 μm T-gate pHEMT technology is described in this paper. Basic requirements of self-aligned technology for gate profile are presented. Metallization system and annealing parameters providing low-resistance ohmic contacts are chosen. Current-voltage characteristics and current gain of routine and self-aligned pHEMT are compared. The self-aligned technology provides an increase in transconductance S and drive current Ids of 10...15% comparing with routine process. Cutoff frequency increased by 15 GHz and reached Ft~70 GHz.
Keywords :
annealing; high electron mobility transistors; ohmic contacts; semiconductor device metallisation; annealing parameters; current gain; current-voltage characteristics; drive current; gate profile; low-resistance ohmic contacts; metallization system; routine pHEMT; self-aligned T-gate pHEMT technology; size 0.25 mum; transconductance; Annealing; Gallium arsenide; Gold; Logic gates; Nickel; PHEMTs; Performance evaluation;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
