Title :
Engineering of low-frequency and low-noise MEFSET average-capacity with regard for fractal properties of gallium arsenide epitaxial layers
Author :
Torkhov, N.A. ; Bozhkov, V.G. ; Genneberg, V.A. ; Petrov, I.V.
Author_Institution :
Sci.-Res. Inst. of Semicond., Tomsk, Russia
Abstract :
The result showed that consideration of n-GaAs epitaxial layer fractal properties allows one to obtain better instrument characteristics in the process of engineering and manufacturing of 0.01-1 GHz low-noise MOFSET of average power 100-500 mW: smaller noise coefficient and higher gain coefficient Cg>;25 dB (transconductance of GM>;180 mS/mm) at a longer gate Lg=1 microns. The results thus indicated the effectiveness of the fractal approach in the process of engineering low-frequency average power MEFSET.
Keywords :
III-V semiconductors; gallium arsenide; power MESFET; semiconductor epitaxial layers; GaAs; fractal properties; frequency 0.01 GHz to 1 GHz; gallium arsenide epitaxial layers; low-frequency MEFSET; low-noise MEFSET; power 100 mW to 500 mW; power MEFSET; Electronic mail; Epitaxial layers; Fractals; Gain; Gallium arsenide; Gold; Manufacturing;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
