• DocumentCode
    2227720
  • Title

    Engineering of low-frequency and low-noise MEFSET average-capacity with regard for fractal properties of gallium arsenide epitaxial layers

  • Author

    Torkhov, N.A. ; Bozhkov, V.G. ; Genneberg, V.A. ; Petrov, I.V.

  • Author_Institution
    Sci.-Res. Inst. of Semicond., Tomsk, Russia
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    697
  • Lastpage
    698
  • Abstract
    The result showed that consideration of n-GaAs epitaxial layer fractal properties allows one to obtain better instrument characteristics in the process of engineering and manufacturing of 0.01-1 GHz low-noise MOFSET of average power 100-500 mW: smaller noise coefficient and higher gain coefficient Cg>;25 dB (transconductance of GM>;180 mS/mm) at a longer gate Lg=1 microns. The results thus indicated the effectiveness of the fractal approach in the process of engineering low-frequency average power MEFSET.
  • Keywords
    III-V semiconductors; gallium arsenide; power MESFET; semiconductor epitaxial layers; GaAs; fractal properties; frequency 0.01 GHz to 1 GHz; gallium arsenide epitaxial layers; low-frequency MEFSET; low-noise MEFSET; power 100 mW to 500 mW; power MEFSET; Electronic mail; Epitaxial layers; Fractals; Gain; Gallium arsenide; Gold; Manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6069113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2227720