Title :
A germanium-on-silicon laser for on-chip applications
Author :
Michel, Jurgen ; Liu, Jifeng ; Kimerling, Lionel C. ; Camacho-Aguilera, Rodolfo ; Bessette, Jonathan T. ; Cai, Yan
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing.
Keywords :
elemental semiconductors; germanium; laser beam applications; silicon; Ge; Si; biaxially tensile strain; electrical excitation; germanium-on-silicon laser; n-type doping; on-chip applications; Doping; Laser excitation; Laser modes; Photonics; Pump lasers; Semiconductor lasers; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
