DocumentCode :
2227771
Title :
Optical gain in GaInNAs and GaInNAsSb quantum wells
Author :
Ferguson, J.W. ; Blood, P. ; Smowton, P.M. ; Bae, H. ; Sarmiento, T. ; Harris, J.S., Jr. ; Tansu, Nelson ; Mawst, Luke J.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
Experiments show that 1.55 μm GalnNAsSb wells have improved gain -radiative current characteristics over 1.3 μm GalnNAs, one contributory factor being reduction in inhomogeneous broadening, raising the question whether Sb could bring benefits for 1.3 μm devices.
Keywords :
III-V semiconductors; amplification; gallium compounds; indium compounds; optical materials; quantum well lasers; spectral line broadening; GaInNAs; GaInNAsSb; gain-radiative current characteristics; inhomogeneous broadening; optical gain; quantum well; wavelength 1.3 mum; wavelength 1.55 mum; Absorption; Current density; Gain measurement; Materials; Photonics; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950135
Link To Document :
بازگشت