DocumentCode
2227844
Title
Al thickness influence on optimal annealing temperature of Ta/Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN
Author
Osipov, K.Y. ; Velikovskiy, L.E. ; Kagadei, Valery A.
Author_Institution
Res. & Production Co. “Micran”, Tomsk, Russia
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
707
Lastpage
708
Abstract
Process flow of Ta/Ti/Al/Mo/Au ohmic contacts formation to AlGaN/GaN heterostructures was developed. Correlation between Al thickness and optimal ohmic contact annealing temperature was obtained. Optimal Ta:Ti:Al:Mo:Au metal ratio was obtained for two different types of AlGaN/GaN heterostructures. Ohmic contacts fabricated in developed process flow show good surface morphology and contact resistance less than 0.5 Ohm/mm.
Keywords
III-V semiconductors; aluminium; aluminium compounds; annealing; gallium compounds; gold; molybdenum; ohmic contacts; tantalum; titanium; wide band gap semiconductors; AlGaN-GaN; Ta-Ti-Al-Mo-Au; aluminium thickness influence; contact resistance; heterostructures; ohmic contact formation; optimal annealing temperature; process flow; surface morphology; Aluminum gallium nitride; Annealing; Gallium nitride; Gold; Ohmic contacts; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6069118
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