Title :
Parameter extraction of threshold voltage model of BSIM3V3
Author :
Peng, Cui ; Jing, Huang ; Zhang Li´ang ; Bing, Yang ; Lijiu, Ji ; Jun, Gu
Author_Institution :
Dept. of Comput. Sci. & Technol., Peking Univ., Beijing, China
Abstract :
The threshold model is one of the models of BSIM3V3. The authors have investigated the parameter extraction of the threshold model. Both single-bin and multi-bin algorithms are implemented which avoid the parameter redundancy problem. Refined device schemes are designed to support the group extraction strategy. For the single-bin algorithm, the relative error of the extracted values of the parameters is less than 0.02%
Keywords :
MOSFET; Newton method; least squares approximations; optimisation; parameter estimation; semiconductor device models; BSIM3V3; MOSFET compact model; circuit simulation; group extraction strategy; least square problems; multi-bin algorithm; parameter extraction; quasi-Newton optimization method; single-bin algorithm; threshold voltage model; Circuit simulation; Computer science; Equations; Geometry; Least squares methods; MOSFET circuits; Optimization methods; Parameter extraction; Redundancy; Threshold voltage;
Conference_Titel :
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6677-8
DOI :
10.1109/ICASIC.2001.982655
