DocumentCode
2227909
Title
Parameter extraction of threshold voltage model of BSIM3V3
Author
Peng, Cui ; Jing, Huang ; Zhang Li´ang ; Bing, Yang ; Lijiu, Ji ; Jun, Gu
Author_Institution
Dept. of Comput. Sci. & Technol., Peking Univ., Beijing, China
fYear
2001
fDate
2001
Firstpage
681
Lastpage
684
Abstract
The threshold model is one of the models of BSIM3V3. The authors have investigated the parameter extraction of the threshold model. Both single-bin and multi-bin algorithms are implemented which avoid the parameter redundancy problem. Refined device schemes are designed to support the group extraction strategy. For the single-bin algorithm, the relative error of the extracted values of the parameters is less than 0.02%
Keywords
MOSFET; Newton method; least squares approximations; optimisation; parameter estimation; semiconductor device models; BSIM3V3; MOSFET compact model; circuit simulation; group extraction strategy; least square problems; multi-bin algorithm; parameter extraction; quasi-Newton optimization method; single-bin algorithm; threshold voltage model; Circuit simulation; Computer science; Equations; Geometry; Least squares methods; MOSFET circuits; Optimization methods; Parameter extraction; Redundancy; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6677-8
Type
conf
DOI
10.1109/ICASIC.2001.982655
Filename
982655
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