DocumentCode :
2227937
Title :
Observation of coherent acoustic phonon lasing in InGaN/GaN MQWs
Author :
Yue-Kai Huang ; Gia-Wei Chern ; Chi-Kuang Sun ; Keller, S. ; DenBaars, S.P.
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
197
Lastpage :
198
Abstract :
Summary form only given. We present the observation of coherent acoustic phonon lasing behavior in InGaN/GaN MQWs. InGaN/GaN MQWs behaved as a phononic-crystal distributed-feedback cavity, thus only the specific phonon modes with wavelengths matching the MQW period width could be selected for coherent output. By using femtosecond ultraviolet pulses as pumping sources, coherent acoustic phonon amplification with over-10 dB acoustic gain was measured. When the induced acoustic gain is higher than the acoustic loss due to its acoustic traveling nature, a clear laser-like threshold behavior was observed.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; phonons; semiconductor quantum wells; InGaN-GaN; InGaN/GaN MQWs; MQW period width; acoustic gain; acoustic traveling nature; coherent acoustic phonon amplification; coherent acoustic phonon lasing; coherent output; femtosecond ultraviolet pulses; laser-like threshold behavior; phononic-crystal distributed-feedback cavity; specific phonon modes; Gallium compounds; Indium compounds; Phonons; Quantum wells; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
Type :
conf
DOI :
10.1109/QELS.2002.1031304
Filename :
1031304
Link To Document :
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