• DocumentCode
    2227995
  • Title

    Coupled Bloch-phonon oscillations in biased InGaAs/InAlAs superlattices

  • Author

    Forst, M. ; Kurz, H. ; Dekorsy, T. ; Leavitt, R.P.

  • Author_Institution
    Inst. fur Halbleitertechnik, RWTH Aachen, Germany
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    198
  • Lastpage
    199
  • Abstract
    Summary form only given. We present experimental results on coupled Bloch-phonon oscillations in a ternary superlattice grown lattice-matched on trip. The well and barrier thicknesses are 8.4 and 51.6 /spl Aring/, respectively, leading to a first electronic miniband of 60 meV width that is weakly confined. This miniband width enables the coherent optical excitation of Bloch oscillations that are tunable above the LO phonon frequencies of both superlattice barriers and wells. The coherent polarizations of the coupled carrier and lattice dynamics are detected via a time-resolved electro-optic sampling technique.
  • Keywords
    III-V semiconductors; Stark effect; aluminium compounds; electron-phonon interactions; gallium compounds; indium compounds; interface phonons; semiconductor superlattices; time resolved spectra; Fourier transforms; InGaAs-InAlAs; LO phonon frequency; biased superlattices; coherent excitation; coupled Bloch-phonon oscillations; electronic Wannier-Stark states; lattice-matched superlattice; long-range Coulomb forces; longitudinal electric fields; time-resolved electro-optic sampling; Aluminum compounds; Electrons; Gallium compounds; Indium compounds; Interface phenomena; Phonons; Semiconductor superlattices; Stark effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Long Beach, CA, USA
  • Print_ISBN
    1-55752-708-3
  • Type

    conf

  • DOI
    10.1109/QELS.2002.1031306
  • Filename
    1031306