DocumentCode
2227995
Title
Coupled Bloch-phonon oscillations in biased InGaAs/InAlAs superlattices
Author
Forst, M. ; Kurz, H. ; Dekorsy, T. ; Leavitt, R.P.
Author_Institution
Inst. fur Halbleitertechnik, RWTH Aachen, Germany
fYear
2002
fDate
19-24 May 2002
Firstpage
198
Lastpage
199
Abstract
Summary form only given. We present experimental results on coupled Bloch-phonon oscillations in a ternary superlattice grown lattice-matched on trip. The well and barrier thicknesses are 8.4 and 51.6 /spl Aring/, respectively, leading to a first electronic miniband of 60 meV width that is weakly confined. This miniband width enables the coherent optical excitation of Bloch oscillations that are tunable above the LO phonon frequencies of both superlattice barriers and wells. The coherent polarizations of the coupled carrier and lattice dynamics are detected via a time-resolved electro-optic sampling technique.
Keywords
III-V semiconductors; Stark effect; aluminium compounds; electron-phonon interactions; gallium compounds; indium compounds; interface phonons; semiconductor superlattices; time resolved spectra; Fourier transforms; InGaAs-InAlAs; LO phonon frequency; biased superlattices; coherent excitation; coupled Bloch-phonon oscillations; electronic Wannier-Stark states; lattice-matched superlattice; long-range Coulomb forces; longitudinal electric fields; time-resolved electro-optic sampling; Aluminum compounds; Electrons; Gallium compounds; Indium compounds; Interface phenomena; Phonons; Semiconductor superlattices; Stark effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-708-3
Type
conf
DOI
10.1109/QELS.2002.1031306
Filename
1031306
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