Title :
Investigation of SiC etch process in inductively coupled SF6/O2/Ar plasma
Author :
Osipov, K.Y. ; Velikovskiy, L.E. ; Kagadei, Valery A.
Author_Institution :
Res. & Production Co. Micran, Tomsk, Russia
Abstract :
The plasma etching process of the SiC via hole fabrication is developed. In the course of the present work the correlation between etch rate and main process parameters, such as: pressure, RF power and gas flow was obtained. The final process shows the etching rate of more than 1000 nm/min during the etching process of the SiC substrate 100μm thick.
Keywords :
silicon compounds; sputter etching; RF power; SiC; etch rate; gas flow; hole fabrication; inductively coupled plasma; plasma etching; Argon; Etching; Gallium nitride; HEMTs; Radio frequency; Silicon carbide; Sulfur hexafluoride;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
