DocumentCode
2228064
Title
Investigation of SiC etch process in inductively coupled SF6 /O2 /Ar plasma
Author
Osipov, K.Y. ; Velikovskiy, L.E. ; Kagadei, Valery A.
Author_Institution
Res. & Production Co. Micran, Tomsk, Russia
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
725
Lastpage
726
Abstract
The plasma etching process of the SiC via hole fabrication is developed. In the course of the present work the correlation between etch rate and main process parameters, such as: pressure, RF power and gas flow was obtained. The final process shows the etching rate of more than 1000 nm/min during the etching process of the SiC substrate 100μm thick.
Keywords
silicon compounds; sputter etching; RF power; SiC; etch rate; gas flow; hole fabrication; inductively coupled plasma; plasma etching; Argon; Etching; Gallium nitride; HEMTs; Radio frequency; Silicon carbide; Sulfur hexafluoride;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6069126
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