Electroconductive properties of nanodimensional CoSbx(30 nm)/SiO2(100 nm)/Si(001) film compositions — Functional elements of thermoelectrics

Author

Makogon, Y.N. ; Albrecht, Martin ; Beddies, G. ; Pavlova, Elmira P. ; Sidorenko, S.I. ; Daniel, Morris ; Verbitska, T.I. ; Shkarban, P.A.

Author_Institution

Nat. Tech. Univ. of Ukraine “KPI”, Kiev, Ukraine

fYear

2011

fDate

12-16 Sept. 2011

Firstpage

739

Lastpage

740

Abstract

This paper is devoted to the study of the effect of deposition conditions and heat treatment on the structure and the phase composition and electroconductive properties of nanodimensional CoSb_x(30 nm)/SiO₂(100 nm)/Si(001) (where x = 3; 3.5) film compositions (NFC´s). The resistance dependence on temperature of NFC´s under investigation depends on the phase composition of a film and has a semiconductor character.

Keywords

cobalt compounds; electrical conductivity; electrical resistivity; heat treatment; nanofabrication; nanostructured materials; silicon compounds; thermoelectricity; thin films; CoSb_x-SiO₂; Si; deposition property; electroconductive properties; film compositions; heat treatment; nanodimensional sample; resistance; size 100 nm; size 30 nm; structural property; thermoelectricity; Cooling; Films; Heating; Resistance; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4577-0883-1

Type

conf

Filename

6069131