Title :
Formation of nanoclusters in the process of nanostructured films formation
Author :
Kovalevsky, A.A. ; Strogova, A.S. ; Borisevich, V.M. ; Strogova, N.S.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
The influence of gas flow speed, hydrides concentration in the reaction zone and the temperature of substrate on the process of formation of germanium nanoclusters and the solid silicon-germanium (Si-Ge) solution is estimated.
Keywords :
Ge-Si alloys; elemental semiconductors; germanium; metal clusters; nanofabrication; nanostructured materials; semiconductor materials; semiconductor thin films; Ge; SiGe; gas flow speed; germanium nanoclusters; hydride concentration; nanostructured films formation; reaction zone; solid silicon-germanium solution; substrate temperature; Electronic mail; Films; Fluid flow; Germanium; Inductors; Solids; Substrates;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
