DocumentCode
2228555
Title
White emission from InGaN multi-quantum wells on c-planes and nano-pyramids hybrid structure
Author
Kim, Taek ; Kim, Jusung ; Yang, Moonseung ; Lee, Sangmoon ; Park, Yongsoo ; Ko, Youngho ; Cho, Yonghoon
Author_Institution
Mater. & Devices Center, Samsung Adv. Inst. of Technol., Yongin, South Korea
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We report a white emission from InGaN multi-quantum wells (MQWs) on micro size c-planes and nano size hexagonal pyramids hybrid structure. Despite simultaneous growth, we achieve two different emission peaks of 461 nm and 568 from the MQWs on the c-planes and on the nano-pyramids, respectively. Using the structure, we achieve a white emission spectrum which is close to that of a phosphor-converted white light emitting diode (LED).
Keywords
III-V semiconductors; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; InGaN; LED; c-planes hexagonal pyramids hybrid structure; multi-quantum wells; nano-pyramids hexagonal pyramids hybrid structure; phosphor-converted white light emitting diode; wavelength 461 nm; wavelength 568 nm; white emission; Gallium nitride; Light emitting diodes; Nanostructures; Phosphors; Quantum well devices; Scanning electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950167
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