DocumentCode
2228649
Title
Preparation of electrodes for molecular transistor by focused ion beam
Author
Kolesov, V.V. ; Sapkov, I.V. ; Soldatov, E.S.
Author_Institution
Inst. of Radioeng. & Electron., Moscow, Russia
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
783
Lastpage
784
Abstract
The blank-chips for molecular transistor were created using milling technology with focused ion beam technology (FIB). The optimal parameters for milling of metal electrodes were found, so it is possible to create a 30 nm gaps suitable for production of system with suspended electrodes. Electrical measurements of a gap show reliable cutting of a metal film. In situ production of simple nanostructures of various shapes potentially useful for quantum devices was demonstrated.
Keywords
electrodes; focused ion beam technology; molecular electronics; nanoelectronics; nanostructured materials; blank-chips; electrical measurements; focused ion beam technology; metal electrodes; metal film; milling technology; molecular transistor; nanostructures; quantum devices; size 30 nm; Electrodes; Gold; Ion beams; Production; Reliability; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6069149
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