Title :
The Monte Carlo calculation of current-voltage characteristics of short-channel Si-MOSFET
Author :
Pozdnyakov, D.V. ; Borzdov, A.V. ; Borzdov, V.M.
Author_Institution :
Belarusian State Univ., Minsk, Belarus
Abstract :
The current-voltage characteristics of Si-MOSFET with channel length of 50 nm are calculated by the many-particle Monte Carlo method. An influence of electron scattering by ionized impurity and plasmons on the characteristics is studied.
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; plasmons; silicon; Si; channel length; current-voltage characteristics; electron scattering; ionized impurity; many-particle Monte Carlo method; plasmons; short-channel silicon-MOSFET; size 50 nm; Current-voltage characteristics; Impurities; Logic gates; MOSFET circuits; Monte Carlo methods; Plasmons; Scattering;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
