• DocumentCode
    2229036
  • Title

    Resistive switching in hafnium dioxide at thermal phase transition

  • Author

    Danilyuk, M.A. ; Migas, D.B. ; Danilyuk, A.L.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    812
  • Lastpage
    813
  • Abstract
    The results of simulation of reversible thermal breakdown of conductive filaments (nanowires) in hafnium dioxide in metal/HfO2/metal(silicon) (MIM(S)) at phase transition in HfO2 are presented. We show that the current voltage characteristics of nanowires are characterized by 3 phases, where 2 of them are linear, and the middle one has the S-shaped form.
  • Keywords
    MIS structures; electrical conductivity transitions; elemental semiconductors; hafnium compounds; nanowires; silicon; switching; S-shaped form; conductive filaments; current voltage characteristics; hafnium dioxide; nanowires; resistive switching; reversible thermal breakdown; thermal phase transition; Conductivity; Current-voltage characteristics; Hafnium compounds; Heating; Nanowires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6069162
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2229036