Title :
Ultra-wide bandwidth, low voltage, and chirp-free optical intensity modulator: design and performance analysis
Author :
Silva, M.T.C. ; de Francisco, C.A.
Author_Institution :
Optoelectron. & Syst. Res. Lab., Sao Paulo Univ., Brazil
Abstract :
A novel wavelength-selective InGaAs/InP coupled asymmetric quantum well electrorefraction type optical intensity modulator is proposed. The device is based on contradirectional exchange Bragg grating coupled-waveguide structure, which avoids the use of an interferometer. For a non-optimized device the bandwidth is 111 GHz at 1.67 V and it is chirp-free. The device can be integrated with lasers, optical amplifiers, photodetectors etc. It can also be integrated in tandem.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; optical waveguide components; semiconductor quantum wells; 1.67 V; 11 GHz; InGaAs-InP; InGaAs/InP coupled asymmetric quantum well; contradirectional exchange Bragg grating coupled waveguide; design; performance analysis; tandem integration; ultra-wide bandwidth low voltage chirp-free operation; wavelength-selective electrorefraction type optical intensity modulator; Bandwidth; Chirp modulation; Indium gallium arsenide; Indium phosphide; Intensity modulation; Low voltage; Optical coupling; Optical interferometry; Optical modulation; Stimulated emission;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511083
