Ultra-wide bandwidth, low voltage, and chirp-free optical intensity modulator: design and performance analysis

Author

Silva, M.T.C. ; de Francisco, C.A.

Author_Institution

Optoelectron. & Syst. Res. Lab., Sao Paulo Univ., Brazil

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

899

Abstract

A novel wavelength-selective InGaAs/InP coupled asymmetric quantum well electrorefraction type optical intensity modulator is proposed. The device is based on contradirectional exchange Bragg grating coupled-waveguide structure, which avoids the use of an interferometer. For a non-optimized device the bandwidth is 111 GHz at 1.67 V and it is chirp-free. The device can be integrated with lasers, optical amplifiers, photodetectors etc. It can also be integrated in tandem.

Keywords

III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; optical waveguide components; semiconductor quantum wells; 1.67 V; 11 GHz; InGaAs-InP; InGaAs/InP coupled asymmetric quantum well; contradirectional exchange Bragg grating coupled waveguide; design; performance analysis; tandem integration; ultra-wide bandwidth low voltage chirp-free operation; wavelength-selective electrorefraction type optical intensity modulator; Bandwidth; Chirp modulation; Indium gallium arsenide; Indium phosphide; Intensity modulation; Low voltage; Optical coupling; Optical interferometry; Optical modulation; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.511083

Filename

511083