• DocumentCode
    2229073
  • Title

    Levels width in triple-barrier structures in two-photon transitions

  • Author

    Kapralova, A.A. ; Pashkovskiy, A.B.

  • Author_Institution
    Fed. State Unitary Corp. R&PC “Istok”, Fryazino, Russia
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    818
  • Lastpage
    819
  • Abstract
    For asymmetric triple-barrier resonant-tunneling structures with thin high barriers, the simple expressions describing resonant transitions in the large-signal high-frequency electric fields have been obtained taking into account levels width. It is shown that conditions exist for every structure, when the majority of electrons falling on the upper energy level can emit two photons and then leave the structure without any intermediate interaction. The number of regions without reflection can reach four.
  • Keywords
    electric fields; energy states; resonant tunnelling; two-photon processes; asymmetric triple-barrier resonant-tunneling structures; large-signal high-frequency electric fields; level width; two-photon transitions; upper energy level; Electric fields; Electronic mail; Energy states; Photonics; Reflection; Resonant tunneling devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6069165