DocumentCode
2229085
Title
Peculiarities of electron transport in double-barrier structures in high frequency electric fields
Author
Kapralova, A.A. ; Lukashin, V.M. ; Pashkovskiy, A.B.
Author_Institution
Fed. State Unitary Corp. R&PC Istok, Fryazino, Russia
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
820
Lastpage
821
Abstract
For asymmetric double-barrier resonant-tunneling structures with thin high barriers, the simple expressions describing resonant transitions in the large-signal high-frequency electric fields have been obtained taking into account levels width. The levels width dependence versus amplitude of the intensive high frequency electric field and peculiarities of electron transport near resonant levels centers has been investigated.
Keywords
electric fields; resonant tunnelling; asymmetric resonant-tunneling structures; double-barrier structures; electron transport; large-signal high-frequency electric fields; resonant transitions; Buildings; Electric fields; Electronic mail; Resonant frequency; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6069166
Link To Document