• DocumentCode
    2229144
  • Title

    Combined two-band models of resonant tunneling structures

  • Author

    Abramov, I.I. ; Kolomeytseva, N.V. ; Romanova, I.A. ; Klimovich, A.G.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    824
  • Lastpage
    825
  • Abstract
    It was shown that a good agreement of the simulation results with the experimental data can be obtained with the use of proposed combined two-band models of resonant tunneling structures.
  • Keywords
    Ge-Si alloys; III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; resonant tunnelling devices; silicon; GaAs-AlAs; InAs-AlSb-GaSb-AlSb-InAs; Si-SiGe; resonant tunneling device; resonant tunneling structures; two-band models; Gallium arsenide; Integrated circuit modeling; Nanoelectronics; Silicon; Silicon germanium; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6069168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2229144